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Transactions of the INDIAN CERAMIC SOCIETY   Vol. 78  2019
Influence of Bi2O3, TiO2 Additives and Sintering Process on the Performance of ITO Target Based on Normal Pressure Sintering Method
Xiaoyu Zhai, Xueli Zhang, Yunqian Ma and Jiaxiang Liu*
Page : 83-88
DOI : 10.1080/0371750X.2019.1605935
Abstract
additive on the properties of single-phase indium tin oxide (ITO) target, prepared by normal pressure sintering method, were studied systematically. The results showed that target sintered at 1550oC for 10 h with a heating rate of 9oC/min had a higher relative density of 98.7% and a lower resistivity of 410–4 .cm. When bismuth trioxide (Bi2O3) was added as a sintering additive, the density of target prepared at 1450oC improved significantly from 87.15% to 93.17%, while the resistivity increased to 73.6510–4 .cm due to poor electrical conductivity of Bi2O3. Moreover, after adding titanium dioxide (TiO2) as sintering additive, density of the target sintered at 1450oC improved from 87.15% to 91.43%. Importantly, the resistivity reached the minimum value of 3.0510–4 .cm at 1550oC. [Keywords: Indium tin oxide target, Normal pressure sintering, Bismuth trioxide, Titanium dioxide]
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