Transactions of the INDIAN CERAMIC SOCIETY Vol. 59 2000
Production of High Aspect Ratio Silicon Carbide
Fibres by Thermal Plasma Method
J. L. GUMASTE, S. K. SINGH, K. N. lENA AND B. C. MOHANTY
Pages : 16-18
DOI : 10.1080/0371750X.2000.10799893
Abstract
An attempt has been made to prepare ~-SiC fibres by the
reaction of SiO vapour with C fibres at a temperature> 1600°C
in an extended arc thermal plasma reactor. The C fibres
prepared by the thermal pyrolysis of cotton fibres are made to
react with SiO vapour generated during the plasma heating of
(Si02 + Si) charge at a temperature> 1600°C. X-ray diffraction
pattern confirms the formation of !}-SiC fibres. The SEM studies
reveal that the fibres thus synthesised have high aspect ratio
with an average diameter of 10-12 J!m and an average length of
250 J!Ill.
