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Transactions of the INDIAN CERAMIC SOCIETY   Vol. 85  2026
Frequency and Temperature dependent Dielectric Relaxation and AC Conductivity of Zn1–xEuxO (x = 0, 0.01, 0.05, 0.1) Nanomaterials obtained by Solution Combustion Technique
Nityanand Choudhary
Pages : 55-64
DOI: 10.1080/0371750X.2026.2636842
Abstract
Zn1–xEuxO (x = 0, 0.01, 0.05 and 0.1) nanomaterials were successfully synthesized via the solution combustion technique and their frequency, temperature-dependent dielectric relaxation and AC conductivity were systematically investigated. X-ray diffraction and Raman scattering confirmed the formation of a single-phase hexagonal wurtzite ZnO structure for all compositions. Thermogravimetry and differential thermal analysis indicated thermal stability of the synthesized samples beyond ~500oC. Transmission electron microscopy revealed nearly spherical nanoparticles with an average size of ~20 nm for the 5% Eu-doped ZnO sample. Dielectric parameters including dielectric constant (), dielectric loss (), loss tangent (tan ), and AC conductivity (ac) were measured over a frequency range of 50 kHz-5 MHz and a temperature range of 100o -400oC. All samples exhibited a decrease in , , tan  and ac with increasing frequency, attributed to space-charge and dipolar polarization effects. A clear shift of dielectric relaxation (transition temperature) toward higher temperatures with increasing Eu concentration was observed, indicating enhanced defect-mediated polarization and charge carrier dynamics. These results demonstrate that Eu doping effectively modifies the dielectric and electrical behaviour of ZnO nanomaterials, making them promising candidates for advanced dielectric and electronic applications.
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