| Arsenic Doping Effects on the Structural and Electrical
Properties of MoS2 Ceramics Designed for 5G/6G Technologies |
Atef Fayez Qasrawi,a, c, * Nancy Asem Jaradata
and Isam Alawnehb
Pages : 224-234
DOI:10.1080/0371750X.2026.2701655 |
| Abstract |
| MoS2
ceramic powders were doped with arsenic (As) using a solid-state reaction
technique, with As concentration varied from 0.0 to 6.68 at%. Increasing As content
significantly enhanced crystallinity and reduced porosity from 61.7% to 23.2%,
while transforming the grain morphology from lamellar and flaky to three-
dimensional polygonal grains. Temperature-dependent electrical studies revealed
a nearly four times increase in conductivity and the formation of shallower donor
levels of 204 meV within the MoS2
band structure. Frequency-dependent dielectric
analysis showed improved dielectric response and reduced loss tangent values
from 0.111 to 0.049, achieving a ‘Qf0
’ figure of merit of 20.33 GHz and a cutoff
frequency of 25.89 GHz at maximum doping. Planar antennas fabricated from
undoped and As-doped ceramics, tested between 0.1 and 6.0 GHz, exhibited
resonant behaviour at 2.6-2.9 GHz with return loss exceeding –28 dB. These
results demonstrate As-doped MoS2
ceramics as promising candidates for 5G/6G
communications. |
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