| PTCR Effect of Chip Type Ba1.005-xSmxTiO3 Ceramics Prepared by Reduction Sintering-Reoxidation Method |
Xuxin Cheng, Dongxiang Zhou, Qiuyun Fu and Shuping Gong
pages 189-194
DOI:10.1080/0371750X.2012.762159 |
| Abstract |
The effects of sintering temperature and reoxidation conduction on the positive temperature coefficient of resistivity (PTCR) effect of chip type Ba1.005-xSmxTiO3 (BSMT) ceramics were investigated. The samples were reoxidized at 600o-800oC for 0-3 h in air after being sintered at 1200o-1280oC for 30 min in a reducing atmosphere. The results indicated that the reduced BSMT ceramics reoxidized at 800oC exhibited a pronounced resistivity jump. Moreover, the room temperature resistivity and resistivity jump of samples decreased with increasing sintering temperature of 1200o-1280oC. Furthermore, BSMT ceramics with 0.6 mol% Sm3+ reoxidized at 750oC for 3 h after sintering at 1200oC for 30 min exhibited a significant resistivity jump of 3.2 orders of magnitude, along with a relatively low room temperature resistivity of 661.4 .cm. In addition, the activation energy of the samples obtained at different sintering temperatures was also investigated.
[Keywords: BaTiO3, PTCR effect, Sm2O3-dopant, Oxygen vacancies, Ferroelectric material]
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