| Large Area Deposition of Polycrystalline Diamond
Coatings by Microwave Plasma CVD |
Awadesh K. Mallik*, Sandip Bysakh, Kalyan S. Pal1, Nandadulal Dandapat1,
Bichitra K. Guha1, Someswar Datta and Debabrata Basu
pages : 225-232
DOI : 10.1080/0371750X.2013.870768 |
| Abstract |
| Polycrystalline diamond (PCD) films have been grown over 100 mm diameter silicon (100) substrate, using microwave
plasma chemical vapour deposition (MPCVD) technique. The deposition was carried out inside a 15 cm diameter
quartz chamber with microwave power of 15 kW at 915 MHz frequency. Uniform substrate surface temperature of
1050oC with plasma heating was maintained with simultaneous cooling arrangement. The pressure was 110 Torr
and the microwave incident power was 8.5 kW. Temperature uniformity and plasma geometry over the substrate
are the key parameters for producing uniformly thick MPCVD diamond films of high quality. Thickness uniformity
of as-deposited films is ±10% across 100 mm diameters with a growth rate of 1 m.h–1. The grown PCD was
characterized by X-ray diffractometry (XRD), Raman spectrometry, field emission scanning electron microscopy
(FESEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and bright field imaging
technique. Experimental results indicate columnar growth of a very densely crystalline PCD with (111) facets of
high quality morphology.
[Keywords: Polycrystalline diamond, Microwave plasma CVD, 915 MHz] |
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