| Surface of SiC obtained from rice husk at 1500°-1800°C
bas been studied by AES before and after sputtering. Presence
of Si, C, 0 and F in the surface is indicated. Binding
energies of these elements with intensity, area and other
observations are tabulated. Individual spectra of the elements
are presented and difference between sputtered and
unsputtered surface is brought out. |
